%{tishi_zhanwei}%
%{tishi_zhanwei}%

Products

Silicon carbide

Rectifier device

Protective device

Transistor

Small signal

IGBT

Modules

Gallium Nitride

Thyristor

MOSFET

Frequency control element

Close Filters Search Reset ALL Excel
Reset ALL
Package
Process
Configuration
ESD
VDS(V)
VGS(±V)
ID@25°C(A)
Rdson@10V_TYP(mΩ)
Rdson@10V_MAX(mΩ)
Rdson@4.5V_TYP(mΩ)
Rdson@4.5V_MAX(mΩ)
VGS(th)(V)
EAS(mj)
Rg(Ω)
Ciss(pF)
Coss(pF)
Crss(pF)
条件:
清空条件
Part Number PDF Process Configuration ESD VDS(V) VGS(±V) ID@25°C(A) Rdson@10V_TYP(mΩ) Rdson@10V_MAX(mΩ) Rdson@4.5V_TYP(mΩ) Rdson@4.5V_MAX(mΩ) VGS(th)(V) EAS(mj) Rg(Ω) Ciss(pF) Coss(pF) Crss(pF) Package

LGE 105N15P

SGT

Single

No

150

20

105

9.7

11

-

-

3

900

1.5

2236

374

31

TO-220

LGE 180N08P

SGT

Single

No

-

-

-

-

3.6

-

-

3

1122

1.3

6281

1100

58

TO-220

LGE 180N08B

SGT

Single

No

-

-

-

-

3.4

-

-

3

1122

1.3

6281

1100

58

TO-263

LGE 210N08P

SGT

Single

No

-

-

-

-

2.2

-

-

3

2304

1.8

14140

2259

61

TO-220

LGE 210N08B

SGT

Single

No

-

-

-

-

2

-

-

3

2304

1.8

14140

2259

61

TO-263

LGE 280N04N

SGT

Single

No

40

20

280

0.75

0.9

1.15

1.3

1.6

1089

2.5

5500

1850

65

PDFN56

LGE 395N04T

SGT

Single

No

40

20

395

0.85

1

-

-

3

1369

2

8780

3429

108

TOLL

LGE 210N15T

SGT

Single

No

150

20

210

3.1

3.8

-

-

3

2025

3

10704

2223

30

TOLL

LGE 330N12T

SGT

Dual

No

120

20

330

1.17

1.6

-

-

3

2601

1.3

13427

2786

108

TOLL

LGE 290N09N2

SGT

Single

No

-

-

-

-

1.8

-

-

3

1406

1.3

7732

3238

201

PDFN56(Double)

%{tishi_zhanwei}%

Address:

Room 13A07, Building B, Haisong Mansion, No. 9 Tairan Road, Chegongmiao, Futian District, Shenzhen

WeChat Work contact

WeChat

Enterprise Official Account

Enterprise Official Account