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Products

Silicon carbide

Rectifier device

Protective device

Transistor

Small signal

IGBT

Modules

Gallium Nitride

Thyristor

MOSFET

Frequency control element

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Package
Polarity
PCM (mW)
IC (mA)
BVCBO (V)
BVCEO (V)
BVEBO (V)
hFE_Min (V)
hFE_Max (V)
hFE_VCE (V)
hFE_IC (mA)
VCE(sat) (V)
VCE(sat)_IC (mA)
VCE(sat)_IE (mA)
fT (MHz)
Marking
条件:
清空条件
Part Number PDF Polarity PCM (mW) IC (mA) BVCBO (V) BVCEO (V) BVEBO (V) hFE_Min (V) hFE_Max (V) hFE_VCE (V) hFE_IC (mA) VCE(sat) (V) VCE(sat)_IC (mA) VCE(sat)_IE (mA) fT (MHz) Marking Package

BC817DS

NPN×2

200

500

50

45

5

160

400

100

0.7

1

500

50

100

N3

SOT-363

BC817DS-40

NPN×2

200

500

50

45

5

250

600

100

0.7

1

500

50

100

N4

SOT-363

BC846ADS

NPN×2

200

100

80

65

6

120

240

2

0.6

5

100

5

100

1A

SOT-23-6L

BC846BDS

NPN×2

200

100

80

65

6

200

400

2

0.6

5

100

5

100

1B

SOT-23-6L

BC846ADW

NPN×2

300

100

80

65

6

110

220

2

0.6

5

100

5

100

1A

SOT-363

BC846BDW

NPN×2

300

100

80

65

6

200

450

2

0.6

5

100

5

100

1B

SOT-363

BC847ADW

NPN×2

300

100

50

45

6

110

220

2

0.6

5

100

5

100

1E

SOT-363

BC847BDW

NPN×2

300

100

50

45

6

200

450

2

0.6

5

100

5

100

1F

SOT-363

BC847CDW

NPN×2

300

100

50

45

6

420

800

2

0.6

5

100

5

100

1G

SOT-363

BC848ADW

NPN×2

300

100

30

30

5

110

220

2

0.6

5

100

5

100

1J

SOT-363

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Room 13A07, Building B, Haisong Mansion, No. 9 Tairan Road, Chegongmiao, Futian District, Shenzhen

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