%{tishi_zhanwei}%
%{tishi_zhanwei}%

Products

Silicon carbide

Rectifier device

Protective device

Transistor

Small signal

IGBT

Modules

Gallium Nitride

Thyristor

MOSFET

Frequency control element

Close Filters Search Reset ALL Excel
Reset ALL
Package
Polarity
PCM (mW)
IC (mA)
BVCBO (V)
BVCEO (V)
BVEBO (V)
hFE_Min (V)
hFE_Max (V)
hFE_VCE (V)
hFE_IC (mA)
VCE(sat) (V)
VCE(sat)_IC (mA)
VCE(sat)_IE (mA)
fT (MHz)
Marking
条件:
清空条件
Part Number PDF Polarity PCM (mW) IC (mA) BVCBO (V) BVCEO (V) BVEBO (V) hFE_Min (V) hFE_Max (V) hFE_VCE (V) hFE_IC (mA) VCE(sat) (V) VCE(sat)_IC (mA) VCE(sat)_IE (mA) fT (MHz) Marking Package

2N5400

PNP

625

600

130

120

5

40

180

10

0.5

5

50

5

100

-

TO-92

2SA562

PNP

500

500

35

30

5

70

240

100

0.25

1

100

10

200

-

TO-92

2SA608

PNP

400

100

40

30

5

60

560

1

0.5

6

50

5

180+

-

TO-92

2SA684

PNP

750

1000

60

50

5

85

340

500

0.4

10

500

50

200+

-

TO-92L

2SA719

PNP

625

500

30

25

5

85

340

150

0.6

10

300

30

200+

-

TO-92

2SA733

PNP

250

100

60

50

5

90

600

1

0.3

6

100

10

180

CS

SOT-23

2SA812

PNP

200

100

60

50

5

90

600

1

0.3

6

100

10

180

M4,M5,M6,M7

SOT-23

2SA817A

PNP

800

400

80

80

5

70

240

50

0.4

2

200

20

100+

-

TO-92MOD

2SA933AS

PNP

300

150

60

50

6

120

560

1

0.5

6

50

5

140

-

TO-92S

2SA940

PNP

1500

1500

150

150

5

40

140

500

1.5

10

500

50

4+

-

TO-220

%{tishi_zhanwei}%

Address:

Room 13A07, Building B, Haisong Mansion, No. 9 Tairan Road, Chegongmiao, Futian District, Shenzhen

WeChat Work contact

WeChat

Enterprise Official Account

Enterprise Official Account