%{tishi_zhanwei}%
%{tishi_zhanwei}%

Products

Silicon carbide

Rectifier device

Protective device

Transistor

Small signal

IGBT

Modules

Gallium Nitride

Thyristor

MOSFET

Frequency control element

Close Filters Search Reset ALL Excel
Reset ALL
Package
Polarity
PCM (mW)
IC (mA)
BVCBO (V)
BVCEO (V)
BVEBO (V)
hFE_Min (V)
hFE_Max (V)
hFE_VCE (V)
hFE_IC (mA)
VCE(sat) (V)
VCE(sat)_IC (mA)
VCE(sat)_IE (mA)
fT (MHz)
Marking
条件:
清空条件
Part Number PDF Polarity PCM (mW) IC (mA) BVCBO (V) BVCEO (V) BVEBO (V) hFE_Min (V) hFE_Max (V) hFE_VCE (V) hFE_IC (mA) VCE(sat) (V) VCE(sat)_IC (mA) VCE(sat)_IE (mA) fT (MHz) Marking Package

2N2222

NPN

625

600

60

30

5

100

300

150

0.4

10

150

15

250

-

TO-92

2N5550

NPN

625

600

160

140

6

60

250

10

0.25

5

50

5

100

-

TO-92

2SC945

NPN

200

100

60

50

5

130

400

1

0.3

6

100

10

150

CR

SOT-23

2SC1383

NPN

1000

1000

30

25

5

85

340

500

0.4

10

500

50

200+

-

TO-92L

2SC1384

NPN

1000

1000

60

50

5

85

340

500

0.4

10

500

50

200+

-

TO-92L

2SC1383

NPN

1000

1000

30

25

5

85

340

500

0.4

10

500

50

200

-

TO-92MOD

2SC1384

NPN

1000

1000

60

50

5

85

340

500

0.4

10

500

50

200

-

TO-92MOD

2SC1623

NPN

200

100

60

50

5

90

600

1

0.3

6

100

10

250

L4,L5,L6.L7

SOT-23

2SC1627A

NPN

800

400

80

80

5

70

240

50

0.4

2

200

20

100

-

TO-92MOD

2SC1654

NPN

150

50

180

160

5

90

400

15

0.3

3

50

5

120+

N5,N6,N7

SOT-23

%{tishi_zhanwei}%

Address:

Room 13A07, Building B, Haisong Mansion, No. 9 Tairan Road, Chegongmiao, Futian District, Shenzhen

WeChat Work contact

WeChat

Enterprise Official Account

Enterprise Official Account