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Products

Silicon carbide

Rectifier device

Protective device

Transistor

Small signal

IGBT

Modules

Gallium Nitride

Thyristor

MOSFET

Frequency control element

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Package
Polarity
PCM (mW)
IC (mA)
BVCBO (V)
BVCEO (V)
BVEBO (V)
hFE_Min (V)
hFE_Max (V)
hFE_VCE (V)
hFE_IC (mA)
VCE(sat) (V)
VCE(sat)_IC (mA)
VCE(sat)_IE (mA)
fT (MHz)
Marking
条件:
清空条件
Part Number PDF Polarity PCM (mW) IC (mA) BVCBO (V) BVCEO (V) BVEBO (V) hFE_Min (V) hFE_Max (V) hFE_VCE (V) hFE_IC (mA) VCE(sat) (V) VCE(sat)_IC (mA) VCE(sat)_IE (mA) fT (MHz) Marking Package

SS8550

PNP

1000

1500

40

25

5

85

400

1

100

0.5

800

80

100

-

TO-92

2SD882

NPN

800

1000

40

30

5

60

400

1

100

0.5

1000

100

90

-

TO-92

2SD882

NPN

2000

3000

40

30

6

60

400

2

1000

0.5

2000

200

90

-

TO-220-3L

D882

NPN

1250

3000

40

30

6

60

400

2

1000

0.5

2000

200

50

-

TO-252

S9013

NPN

625

500

40

25

5

64

400

1

50

0.6

500

50

150

-

TO-92

S9014

NPN

450

100

50

45

5

60

1000

5

1

0.3

100

5

150

-

TO-92

SS8050

NPN

500

1500

40

25

6

120

400

1

100

0.5

800

80

100

Y1

SOT-89

SS8050

NPN

1000

1500

40

25

5

85

400

1

100

0.5

800

80

100

-

TO-92

TIP41C

NPN

2000

6000

100

100

5

15

75

4

3000

1.5

6000

600

3

-

TO-220AB

B772

PNP

1250

3000

40

30

6

60

400

2

1000

0.5

2000

200

50

-

TO-252

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Room 13A07, Building B, Haisong Mansion, No. 9 Tairan Road, Chegongmiao, Futian District, Shenzhen

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