Products
Silicon carbide
Rectifier device
Protective device
Transistor
Small signal
IGBT
Modules
Gallium Nitride
Thyristor
MOSFET
Frequency control element
| Part Number | PD (mW) | lout (mA) | VIN (V) | Vo (V) | lQ (mA) | PIN Array | Package | |
|---|---|---|---|---|---|---|---|---|
|
LGE7805 |
1900 |
1500 |
35 |
4.8~5.2 |
8 |
IGO |
TO-220AB |
|
|
LGE7806 |
1900 |
1500 |
35 |
5.75~6.25 |
8 |
IGO |
TO-220AB |
|
|
LGE7807 |
1900 |
1500 |
35 |
6.72~7.28 |
8 |
IGO |
TO-220AB |
|
|
LGE7808 |
1900 |
1500 |
35 |
7.7~8.3 |
8 |
IGO |
TO-220AB |
|
|
LGE7809 |
1900 |
1500 |
35 |
8.64～9.36 |
8 |
IGO |
TO-220AB |
|
|
LGE7810 |
1900 |
1500 |
35 |
9.6~10.4 |
8 |
IGO |
TO-220AB |
|
|
LGE7812 |
1900 |
1500 |
35 |
11.5~12.5 |
8 |
IGO |
TO-220AB |
|
|
LGE7815 |
1900 |
1500 |
35 |
14.4~15.6 |
8 |
IGO |
TO-220AB |
|
|
LGE7818 |
1900 |
1500 |
40 |
17.3~18.7 |
8 |
IGO |
TO-220AB |
|
|
LGE7820 |
1900 |
1500 |
40 |
19.2~20.8 |
8 |
IGO |
TO-220AB |
Phone:
Email:
Address:
Room 13A07, Building B, Haisong Mansion, No. 9 Tairan Road, Chegongmiao, Futian District, Shenzhen
Enterprise Official Account
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