Products
Silicon carbide
Rectifier device
Protective device
Transistor
Small signal
IGBT
Modules
Gallium Nitride
Thyristor
MOSFET
Frequency control element
| Part Number | VDS (V) | ID (A) | RDS(on) (mΩ) | PD (W) | TJ (℃) | COSS (pF) | Qg (nC) | Package | |
|---|---|---|---|---|---|---|---|---|---|
|
LGE3M20065Q |
650 |
179 |
18 |
682 |
175 |
453 |
173 |
TO-247-4 |
|
|
LGE3M25065B |
650 |
111 |
23 |
357 |
175 |
195 |
100 |
TO-247-3 |
|
|
LGE3M28065Q |
650 |
95 |
28 |
326 |
175 |
295 |
163 |
TO-247-4 |
|
|
LGE3M30065Q |
650 |
92 |
28 |
326 |
175 |
295 |
163 |
TO-247-4 |
|
|
LGE3M25065Q |
650 |
92 |
29 |
326 |
175 |
183 |
61 |
TO-247-4 |
|
|
LGE3M30065B |
650 |
91 |
30 |
326 |
175 |
280 |
147 |
TO-247-3 |
|
|
LGE3M40065B |
650 |
72 |
40 |
348 |
175 |
179 |
110.8 |
TO-247-3 |
|
|
LGE3M40065Q |
650 |
72 |
40 |
348 |
175 |
179 |
110.8 |
TO-247-4 |
|
|
LGE3M80065B |
650 |
46 |
53 |
182 |
175 |
130 |
48 |
TO-247-3 |
|
|
LGE3M60065Q |
650 |
51 |
59 |
208 |
175 |
145 |
78 |
TO-247-4 |
Phone:
Email:
Address:
Room 13A07, Building B, Haisong Mansion, No. 9 Tairan Road, Chegongmiao, Futian District, Shenzhen
Enterprise Official Account
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