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Products

Silicon carbide

Rectifier device

Protective device

Transistor

Small signal

IGBT

Modules

Gallium Nitride

Thyristor

MOSFET

Frequency control element

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Package
VR (V)
IO(AV)@TC (A)
IFSM@45℃ 10ms (A)
TC (℃)
IR@150℃ (mA)
VF@25℃_Max (V)
条件:
清空条件
Part Number PDF VR (V) IO(AV)@TC (A) IFSM@45℃ 10ms (A) TC (℃) IR@150℃ (mA) VF@25℃_Max (V) Package Circuit structure

K2S160-100

100

160

1000

-205

30

0.75

SOT227

Image Name

K2S200-200

200

200

1400

-205

30

0.9

SOT227

Image Name

FAS200DA100

100

200

1500

-205

30

0.78

FA

Image Name

FAS400DK200

200

400

3300

-205

30

0.92

FA

Image Name

FDS200DA100

100

200

1500

-205

30

0.78

FD

Image Name

FDS400DK200

200

400

3300

-205

30

0.92

FD

Image Name

FBS600DA100

100

600

4000

-

30

0.8

FB

Image Name

FBS800DK200

200

800

5000

-

30

0.9

FB

Image Name

FCS200IDA45

45

200

1500

-

40

0.62

FC

Image Name

FCS300IDK100

100

300

2000

-

30

0.8

FC

Image Name
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Address:

Room 13A07, Building B, Haisong Mansion, No. 9 Tairan Road, Chegongmiao, Futian District, Shenzhen

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