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Products

Silicon carbide

Rectifier device

Protective device

Transistor

Small signal

IGBT

Modules

Gallium Nitride

Thyristor

MOSFET

Frequency control element

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Package
IT(RMS)_Max(μA)
VDRM_Min(V)
IDRM_Max(μA)
VBO_Min(V)
VBO_Max(V)
IBO_Max(mA)
IH_Min(mA)
IH_Max(mA)
VTM_Max(V)
条件:
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Part Number PDF IT(RMS)_Max(μA) VDRM_Min(V) IDRM_Max(μA) VBO_Min(V) VBO_Max(V) IBO_Max(mA) IH_Min(mA) IH_Max(mA) VTM_Max(V) Package

K0900G

1

70

1

80

100

0.5

10

50

2

DO-15

K1050G

1

90

1

95

115

0.5

10

50

2

DO-15

K1100G

1

95

1

100

120

0.5

10

50

2

DO-15

K1200G

1

100

1

110

130

0.5

10

50

2

DO-15

K1300G

1

110

1

120

140

0.5

10

50

2

DO-15

K1400G

1

120

1

130

150

0.5

10

50

2

DO-15

K1500G

1

130

1

140

160

0.5

10

50

2

DO-15

K1600G

1

140

1

150

170

0.5

10

50

2

DO-15

K1800G

1

160

1

170

190

0.5

10

50

2

DO-15

K2000G

1

180

1

190

210

0.5

10

50

2

DO-15

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Address:

Room 13A07, Building B, Haisong Mansion, No. 9 Tairan Road, Chegongmiao, Futian District, Shenzhen

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