Products
Silicon carbide
Rectifier device
Protective device
Transistor
Small signal
IGBT
Modules
Gallium Nitride
Thyristor
MOSFET
Frequency control element
| Part Number | VR (V) | IO(AV)@TC (A) | IFSM@45℃ 10ms (A) | TC (℃) | IR@150℃ (mA) | VF@25℃_Max (V) | Package | Circuit structure | |
|---|---|---|---|---|---|---|---|---|---|
|
K2U30DB06 |
600 |
30 |
300 |
110 |
2 |
1.4 |
SOT227 |
|
|
|
K2U30DB12 |
1200 |
30 |
300 |
110 |
2 |
2.8 |
SOT227 |
|
|
|
D1D50DS16 |
1600 |
50 |
1150 |
100 |
2 |
1 |
D1 |
|
|
|
D1D75DS16 |
1600 |
75 |
1150 |
100 |
2 |
1 |
D1 |
|
|
|
D1D100DS16 |
1600 |
100 |
1800 |
100 |
2 |
1 |
D1 |
|
|
|
D2D150DS16 |
1600 |
150 |
2700 |
100 |
5 |
1 |
D2 |
|
|
|
D2D200DS16 |
1600 |
200 |
2700 |
100 |
5 |
1 |
D2 |
|
|
|
D2D250DS16 |
1600 |
250 |
3000 |
100 |
5 |
1 |
D2 |
|
Phone:
Email:
Address:
Room 13A07, Building B, Haisong Mansion, No. 9 Tairan Road, Chegongmiao, Futian District, Shenzhen
Enterprise Official Account
Copyright © Shenzhen LGE Electronic Technology Co., Ltd. All rights reserved.