Products
Silicon carbide
Rectifier device
Protective device
Transistor
Small signal
IGBT
Modules
Gallium Nitride
Thyristor
MOSFET
Frequency control element
| Part Number | PD (mW) | lout (mA) | VIN (V) | Vo (V) | lQ (mA) | PIN Array | Package | |
|---|---|---|---|---|---|---|---|---|
|
AMS1117-ADJ |
500 |
800 |
20 |
1.238~1.262 |
- |
GOI |
SOT-89 |
|
|
AMS1117-1.5 |
500 |
800 |
20 |
1.485~1.515 |
11 |
GOI |
SOT-89 |
|
|
AMS1117-1.8 |
500 |
800 |
20 |
1.782~1.818 |
11 |
GOI |
SOT-89 |
|
|
AMS1117-2.5 |
500 |
800 |
20 |
2.475~2.525 |
11 |
GOI |
SOT-89 |
|
|
AMS1117-2.85 |
500 |
800 |
20 |
2.82~2.88 |
11 |
GOI |
SOT-89 |
|
|
AMS1117-3.3 |
500 |
800 |
20 |
3.267~3.333 |
11 |
GOI |
SOT-89 |
|
|
AMS1117-5.0 |
500 |
800 |
20 |
4.95~5.05 |
11 |
GOI |
SOT-89 |
|
|
AMS1117-ADJ |
750 |
1000 |
18 |
1.225~1.275 |
- |
GOI |
SOT-223 |
|
|
AMS1117-1.2 |
750 |
1000 |
18 |
1.175~1.225 |
8 |
GOI |
SOT-223 |
|
|
AMS1117-1.25 |
750 |
1000 |
18 |
1.238~1.275 |
8 |
GOI |
SOT-223 |
Phone:
Email:
Address:
Room 13A07, Building B, Haisong Mansion, No. 9 Tairan Road, Chegongmiao, Futian District, Shenzhen
Enterprise Official Account
Copyright © Shenzhen LGE Electronic Technology Co., Ltd. All rights reserved.