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Product Reference
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Products

Silicon carbide

Rectifier device

Protective device

Transistor

Small signal

IGBT

Modules

Gallium Nitride

Thyristor

MOSFET

Frequency control element

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Package
VCES (V)
IC nom (A)
VCE(sat)Typ
Ptot (W)
Eoff(mJ)
RthJC (℃/W)
条件：
清空条件
Part Number PDF VCES (V) IC nom (A) VCE(sat)Typ Ptot (W) Eoff(mJ) RthJC (℃/W) Package Circuit structure

GPM15H120E1P

1200

15

1.64

1.85

5.7

7.7

E1

Image Name

GPM25H120E2P

1200

25

1.55

1.75

5.55

7.55

E2

Image Name

UG100H12S4L

1200

100

3.05

3.55

4.7

6.7

G1B

Image Name

WG200H12S4L

1200

200

3.1

3.6

4.6

6.6

G2B

Image Name

G2B200R170S1P

1700

200

1.65

1.85

4.6

6.6

G2B

Image Name

GTK600H120G2

1200

600

1.65

1.9

5.15

6.45

G2B

Image Name

GTK600H120G9

1200

600

1.7

2

5

6.0

G9

Image Name

G2B800H120S1P

1200

800

1.8

2

5.7

6.7

G2B

Image Name

GTK900H120G9

1200

900

1.7

2

5

6.0

G9

Image Name
LGE Electronics
Language
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Phone:

86-755-23981126

Email:

lge@luguang.cn

Address:

Room 13A07, Building B, Haisong Mansion, No. 9 Tairan Road, Chegongmiao, Futian District, Shenzhen

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