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Silicon carbide
Rectifier device
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Transistor
Small signal
IGBT
Modules
Gallium Nitride
Thyristor
MOSFET
Frequency control element
| Part Number | VCES (V) | IC@100℃ (A) | VCE(sat)_Typ (V) | VCE(sat)_Max (V) | VGE(th)_Min (V) | VGE(th)_Max (V) | Tf @25℃ (nS) | Eoff @25℃ (mJ) | VF_Typ (V) | Trr (nS) | TSC (μS) | ISC (A) | Package | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
LGE GD6N65T |
650 |
6 |
1.5 |
2 |
4.5 |
6 |
64 |
0.07 |
1.65 |
55 |
10 |
- |
TO-252-2 |
|
|
LGE GF6N65T |
650 |
6 |
1.5 |
2 |
4.5 |
6 |
64 |
0.07 |
1.65 |
55 |
10 |
- |
TO-220F |
|
|
LGE GB6N65T |
650 |
6 |
1.5 |
2 |
4.5 |
6 |
64 |
0.07 |
1.65 |
55 |
10 |
- |
TO-263 |
|
|
LGE GF15N65T |
650 |
15 |
1.5 |
1.9 |
4.4 |
6.4 |
85 |
0.09 |
1.8 |
50 |
5 |
- |
ITO-220AB |
|
|
LGE GC15N65T |
650 |
15 |
1.5 |
1.9 |
4.4 |
6.4 |
85 |
0.09 |
1.8 |
50 |
5 |
- |
TO-220C |
|
|
LGE GB15N65T |
650 |
15 |
1.5 |
1.9 |
4.4 |
6.4 |
85 |
0.09 |
1.8 |
50 |
5 |
- |
TO-263 |
|
|
LGE G20N135GKH |
1350 |
20 |
2.3 |
2.8 |
5.3 |
6.9 |
209 |
0.5 |
2.2 |
144 |
10 |
- |
TO-247 |
|
|
LGE GW30N65TF |
650 |
30 |
1.6 |
2.1 |
5 |
6.5 |
32.9 |
0.27 |
1.95 |
206 |
10 |
- |
TO-247 |
|
|
LGE GW40N65HU |
650 |
40 |
1.6 |
2.1 |
4.5 |
6.0 |
60 |
0.94 |
1.62 |
109 |
- |
- |
TO-247 |
|
|
LGE GW40N120AF7 |
1200 |
40 |
1.75 |
2.2 |
5.1 |
6.7 |
75 |
1.2 |
2 |
440 |
- |
- |
TO-247 |
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