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Products

Silicon carbide

Rectifier device

Protective device

Transistor

Small signal

IGBT

Modules

Gallium Nitride

Thyristor

MOSFET

Frequency control element

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Package
VR (V)
IO(AV)@TC (A)
IFSM@45℃ 10ms (A)
TC (℃)
Trr@25℃ (nS)
VF@25℃_Max (V)
条件:
清空条件
Part Number PDF VR (V) IO(AV)@TC (A) IFSM@45℃ 10ms (A) TC (℃) Trr@25℃ (nS) VF@25℃_Max (V) Package Circuit structure

T1U60KD06

600

60

1000

85

60

1.4

T1X

Image Name

T1U100KD12

1200

100

2000

85

120

2.2

T1X

Image Name

T2U200KD06

600

200

2800

85

180

1.4

T2B

Image Name

T2U200KD12

1200

200

2800

85

180

2.3

T2B

Image Name

K2U120-400

400

120

700

110

50

2.8

SOT227

Image Name

K2U200-600

600

200

1250

110

90

1.5

SOT227

Image Name

FAU300DK04

400

300

1500

110

130

1.25

FA

Image Name

FBU400DK06

600

400

2800

110

160

1.5

FB

Image Name
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