%{tishi_zhanwei}%
%{tishi_zhanwei}%

Products

Silicon carbide

Rectifier device

Protective device

Transistor

Small signal

IGBT

Modules

Gallium Nitride

Thyristor

MOSFET

Frequency control element

Close Filters search Reset ALL Excel
Reset ALL
Package
Polarity
PCM (mW)
IC (mA)
BVCBO (V)
BVCEO (V)
BVEBO (V)
hFE_Min (V)
hFE_Max (V)
hFE_VCE (V)
hFE_IC (mA)
VCE(sat) (V)
VCE(sat)_IC (mA)
VCE(sat)_IE (mA)
fT (MHz)
Marking
条件:
清空条件
Part Number PDF Polarity PCM (mW) IC (mA) BVCBO (V) BVCEO (V) BVEBO (V) hFE_Min (V) hFE_Max (V) hFE_VCE (V) hFE_IC (mA) VCE(sat) (V) VCE(sat)_IC (mA) VCE(sat)_IE (mA) fT (MHz) Marking Package

2SD2142

NPN

200

300

40

32

12

5000

-

3

100

1.4

200

0.2

200

R1M

SOT-23

BCV27

NPN

350

500

40

30

10

20000

-

5

100

1

100

0.1

170

FF

SOT-23

BCV47

NPN

350

500

80

60

10

10000

-

5

100

1

100

0.1

170

FG

SOT-23

BCV26

PNP

250

-500

-40

-30

-10

20000

-

-5

-100

1

-100

-0.1

220

FD

SOT-23

BCV46

PNP

250

-500

-80

-60

-10

10000

-

-5

-100

1

-100

-0.1

220

FE

SOT-23

CTZ122

NPN

1000

5000

100

100

5

1000

-

3

0.5

2

3000

12

4

CTZ122

SOT-223

CTZ127

PNP

1000

-5000

-100

-100

-5

1000

-

-3

-0.5

-2

-3000

-12

4

CTZ127

SOT-223

MJD112

NPN

1500

2000

100

100

5

1000

12000

3

2000

2

2000

8

25

MJD112

TO-251

MJD112

NPN

1500

2000

100

100

5

1000

12000

3

2000

2

2000

8

25

MJD112

TO-252

MJD117

PNP

1500

-2000

-100

-100

-5

1000

12000

-3

-2000

-2

-2000

-8

25

MJD117

TO-251

%{tishi_zhanwei}%

Address:

Room 13A07, Building B, Haisong Mansion, No. 9 Tairan Road, Chegongmiao, Futian District, Shenzhen

WeChat Work contact

WeChat

Enterprise Official Account

Enterprise Official Account