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%{tishi_zhanwei}%

Products

Silicon carbide

Rectifier device

Protective device

Transistor

Small signal

IGBT

Modules

Gallium Nitride

Thyristor

MOSFET

Frequency control element

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Package
IAV(A)
VRWM (V)
IFSM (A)
VFM (V)
@IAV (A)
IRM (mA)
Trr (nS)
条件:
清空条件
Part Number PDF IAV(A) VRRM (V) IFSM (A) VFM (V) @IAV (A) IRM (mA) Trr (nS) Package

GBJ2502L

25

200

475

0.92

12.5

5

-

GBJ

GBJ2504L

25

400

475

0.92

12.5

5

-

GBJ

GBJ2506L

25

600

475

0.92

12.5

5

-

GBJ

GBJ2508L

25

800

475

0.92

12.5

5

-

GBJ

GBJ2510L

25

1000

475

0.92

12.5

5

-

GBJ

GBJ5006L

50

600

450

0.97

25

5

-

GBJ

GBU406L

4

600

150

0.92

4

5

-

GBU

GBU606L

6

600

175

0.92

3

5

-

GBU

GBU806L

8

600

220

0.92

4

5

-

GBU

GBU1006L

10

600

220

0.92

5

5

-

GBU

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Room 13A07, Building B, Haisong Mansion, No. 9 Tairan Road, Chegongmiao, Futian District, Shenzhen

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